? 2013 ixys all rights reserved 1 - 4 20130619 MIXD50W650TED ixys reserves the right to change limits, test conditions and dimensions. t e n t a t i v e part name (marking on product) MIXD50W650TED v ces = 650 v i c25 = 71 a v ce(sat) typ. = 1.55 v six-pack trench xpt igbt 23, 24 21, 22 19, 20 9 10 11 12 5 6 7 8 1 2 3 4 25, 26 27, 28 ntc 17 18 15, 16 13, 14 pin confguration see outlines. e72873 features: ? easy paralleling due to the positive temperature coeffcient of the on-state voltage ? rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - square rbsoa @ 3x i c - low emi ? thin wafer technology combined with the xpt design results in a competitive low v ce(sat) ? sonic? diode - fast and soft reverse recovery - low operating forward voltage application: ? ac motor drives ? solar inverter ? medical equipment ? uninterruptible power supply ? air-conditioning systems ? welding equipment ? switched-mode and resonant-mode power supplies package: ? "e2-pack" standard outline ? insulated copper base plate ? soldering pins for pcb mounting ? temperature sense included
? 2013 ixys all rights reserved 2 - 4 20130619 MIXD50W650TED ixys reserves the right to change limits, test conditions and dimensions. t e n t a t i v e igbts ratings symbol defnitions conditions min. typ. max. unit v ces collector emitter voltage t vj = 25c 650 v v ges v gem max. dc gate voltage max. transient collector gate voltage continuous transient 20 30 v v i c25 i c80 collector current t vj = 175c t c = 25c t c = 80c 71 54 a a p tot total power dissipation t c = 25c 190 w v ce(sat) collector emitter saturation voltage i c = 50 a; v ge = 15 v t vj = 25c (on die level) t vj = 150c 1.55 1.85 1.80 v v v ge(th) gate emitter threshold voltage i c = 0.8 ma; v ge = v ce t vj = 25c 5.0 6.5 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c t vj = 150c 20 0.60 200 a ma i ges gate emitter leakage current v ce = 0 v; v ge = 20 v 500 na c ies input capacitance v ce = 25 v; v ge = 0 v; f = 1 mhz tbd nf q g(on) total gate charge v ce = 300 v; v ge = 0...15 v; i c = 50 a 130 nc t d(on) t r t d(off) t f e on e off e rec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off inductive load t vj = 150c v ce = 300 v; i c = 50 a v ge = 15 v; r g = 15 w 25 45 120 40 0.80 1.20 tbd ns ns ns ns mj mj mj i cm v cek reverse bias safe operating area rbsoa; v ge = 15 v; r g = 15 w ; l = 100 h clamped inductive load ; t vj = 150c 100 650 a v t sc (scsoa) short circuit safe operating area v ce = 360 v; v ge = 15 v; t vj = 150c r g = 15 w; non-repetitive 200 10 s a r thjc thermal resistance junction to case (per igbt) 0.80 k/w r thch thermal resistance case to heatsink (per igbt) 0.30 k/w diodes symbol defnitions conditions maximum ratings v rrm max. repetitive reverse voltage 650 v i f25 i f80 forward current t vj = 175c t c = 25c t c = 80c 55 40 a a symbol conditions characteristic values min. typ. max. v f forward voltage i f = 50 a t vj = 25c t vj = 150c 1.7 1.9 2.0 v v q rr i rm t rr e rec(off) reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery losses at turn-off v r = 325 v; i f = 50 a di f /dt = -900 a/s t vj = 150c 4.5 45 150 1.0 c a ns mj r thjc thermal resistance junction to case (per diode) 1.2 k/w r thch thermal resistance case to heatsink (per diode) 0.4 k/w
? 2013 ixys all rights reserved 3 - 4 20130619 MIXD50W650TED ixys reserves the right to change limits, test conditions and dimensions. t e n t a t i v e temperature sensor ntc ratings symbol defnitions conditions min. typ. max. unit r 25 b 25/50 resistance t c = 25c 4.75 5.0 3375 5.25 kw k module ratings symbol defnitions conditions min. typ. max. unit t vj t vjm t stg operating temperature max. virtual junction temperature storage temperature -40 -40 150 175 125 c c c v isol isolation voltage i isol < 1 ma; 50/60 hz 1 min. 1 sec. 2500 3000 v~ v~ m d mounting torque (m4) 2.0 2.2 nm d s d a creep distance on surface strike distance through air 11.5 10.0 mm mm weight 40 g r pin-chip resistance pin to chip v = v cesat + 2ri c resp. v = v f + 2ri f 6 mw equivalent circuits for simulation ratings symbol defnitions conditions min. typ. max. unit v 0 r 0 igbt t vj = 175c 0.8 26 v mw v 0 r 0 diode t vj = 175c 1.15 18 v mw i v 0 r 0 0 2 5 5 0 7 5 10 0 12 5 15 0 1 0 2 1 0 3 1 0 4 1 0 5 r [ w ] typ. ntc resistance v s . temperature t c [c ]
? 2013 ixys all rights reserved 4 - 4 20130619 MIXD50W650TED ixys reserves the right to change limits, test conditions and dimensions. t e n t a t i v e ordering part name marking on product delivering mode base qty ordering code standard MIXD50W650TED MIXD50W650TED box 6 tbd outline drawing dimensions in mm (1 mm = 0.0394) product marking 23, 24 21, 22 19, 20 9 10 11 12 5 6 7 8 1 2 3 4 25, 26 27, 28 ntc 17 18 15, 16 13, 14 x 0 baseplate typ. 100 m convex over 75 mm before mounting 20.5 0.1 17 0.5 7 -0.5 ? 2.1; l=6 0.2 0.2 0.1 0.2 0.3 y b ? 2.5 ? 2.1 detail z + 0.3 ? 6 6 1.5 z detail x 0.05 0.02 0.8 1.2 detail y 0.05 1 15 0.8 45 38.4 32 11 ?5.5 72.7 75.7 82.3 93 107.5 3.5 -0.5 42.69 38.88 54.12 50.31 61.74 65.55 76.98 73.17 19.83 16.02 31.26 27.45 0 20.95 11.43 7.62 7.62 11.43 20.95 76.98 61.74 2 1 6 5 3 4 8 7 9 10 12 11 86.1 73.17 57.93 38.88 42.69 23.64 19.83 24 21 22 23 19 20 17 18 n 0.4 j a b a 15 14 13 27 28 16 25 26
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